Electronic Devices Question 130
Question: Consider the following statements A and B and identify the correct choice of the given answers A: The width of the depletion layer in a P-N junction diode increases in forwards bias B: In an intrinsic semiconductor the fermi energy level is exactly in the middle of the forbidden gap
[EAMCET (Engg.) 2000]
Options:
A) A is true and B is false
B) Both A and B are false
C) A is false and B is true
D) Both A and B are true
Show Answer
Answer:
Correct Answer: C
Solution:
In forward biasing of PN junction diode width of depletion layer decreases.
In intrinsic semiconductor fermi energy level is exactly in the middle of the forbidden gap
BETA
