Modern Physics Ques 6
- The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon $p-n$ junctions are
(1997C, 1M)
(a) drift in forward bias, diffusion in reverse bias.
(b) diffusion in forward bias, drift in reverse bias.
(c) diffusion in both forward and reverse bias.
(d) drift in both forward and reverse bias.
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Answer:
Correct Answer: 6.( b )
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