Semiconductor Electronics Materials Devices And Simple Circuits Ques 81
81. For transistor action :
[2010]
(1) Base, emitter and collector regions should have similar size and doping concentrations.
(2) The base region must be very thin and lightly doped.
(3) The emitter-base junction is forward biased and base-collector junction is reverse based.
(4) Both the emitter-base junction as well as the base-collector junction are forward biased.
(a) (3), (4)
(b) (4),(1)
(c) (1),(2)
(d) (2), (3)
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Answer:
Correct Answer: 81.(d)
Solution:
- (d) For transistor action, the base region must be very thin and lightly doped. Also, the emitter-base junction is forward biased and base-collector junction is reverse biased.
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